AP5521GM-HF mosfet equivalent, n and p-channel enhancement mode power mosfet.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
100V 150mΩ
2.5A -100V 160mΩ -2.5A
D2
The SO-8 package is widely pref.
AP5521 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of p.
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